Effect of Direct X-Ray Radiation on P-N Junction Diode Characteristics

Authors

  • สุรดา เอื้อมานะพงษ์
  • อิสระ ศรีธนชัย
  • สุรศักดิ์ เนียมเจริญ
  • อัมพร โพธิ์ใย

Keywords:

p-n junction, x-ray,, I-V and C-V characteristics,, generation carrier lifetime,, activation energy

Abstract

This article presents the characteristics of a p-n junction diode which was used as an x-ray detector. In this experiment, reports of analyzing current–voltage (I-V), capacitance–voltage (C-V) characteristics, generation carrier lifetime and activation energy of the p-n junction diodes before and after x-ray irradiation have been presented. Diodes were irradiated with energy of 40, 55 and 70 keV all for 5, 55 and 205 seconds. The results showed that leakage current of diodes irradiated with energy 70 keV was reduced, while leakage currents of diodes irradiated with energy 40 and 55 keV were increased which is quite an interesting issue. Therefore, the diode, irradiated with energy 70 keV, has been carried out in detail and found that the energy of irradiated 70 keV gives results of  higher generation carrier lifetime and lower  number of defects at pn junction of the device.

References

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Published

2020-06-11

How to Cite

[1]
เอื้อมานะพงษ์ ส. ., ศรีธนชัย อ. ., เนียมเจริญ ส., and โพธิ์ใย อ. ., “Effect of Direct X-Ray Radiation on P-N Junction Diode Characteristics ”, Eng. & Technol. Horiz., vol. 28, no. 1, pp. 31–36, Jun. 2020.

Issue

Vol. 28 No. 1 (2011): ่january - march

Section

Research Articles

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