Design of isolated IGBT driving and control circuits for an interleaved boost converter

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Published: Jan 27, 2021
Keywords:
Boost DC/DC DAQ Interleaved LabVIEW P-I controller

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Mustafa Fawzi Mohammed
BIT Department, Business Informatics Collage, University of Information Technology & Communications, Baghdad 10001, Iraq
Ali Husain Ahmad
Department of Medical Devices Technology Engineering, Al-Hadi University Collage, Baghdad 10001, Iraq
Abdulrahim Thiab Humod
Electrical Engineering Department, University of Technology, Baghdad 10001, Iraq

Abstract

An IGBT/MOSFET driver circuit works at a low voltage, between 5-15 V of its gate voltage to drive power converter switching devices that work at higher voltages. If there is no isolation between the driver and power converter circuits, any damage that may occur to the power converter circuit at high voltage will damage the driver circuit as well. This paper presents a design of an isolated IGBT/MOSFET driver circuit for an interleaved DC/DC boost converter using a TL494 IC to generate the required pulses for the converter’s circuit. Isolation is done using optocouplers. An IC IR2117 driver is also used to produce smooth rise and fall times for the pulses for each IGBT. The designed driver circuit is modelled using a co-simulation employing Multisim and LabVIEW software and then implemented experimentally with the help of a NI PCI-DAQ 6259. A P-I controller is implemented to regulate the output voltage of the boost converter, as well at the desired set point.

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How to Cite
Mohammed, M. F. ., Ahmad, A. H. ., & Humod, A. T. . (2021). Design of isolated IGBT driving and control circuits for an interleaved boost converter. Engineering and Applied Science Research, 48(1), 48–55. Retrieved from https://ph01.tci-thaijo.org/index.php/easr/article/view/226487
Issue
Vol. 48 No. 1 (2021)
Section
ORIGINAL RESEARCH

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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