Development of A Gauge Pressure Sensors Based on SU-8 Photoresist Diaphragm

Authors

  • กมลรัตน์ บุญประคอง
  • พิทยา ดีกล้า
  • นิมิต ชมนาวัง

Keywords:

diaphragm,, pressure sensor,, photolithography,, MEMS

Abstract

This paper presents a design and fabrication of a gauge pressure sensor by using MEMS processes. The sensor was developed base on SU-8 photoresist diaphragm. Since SU-8 photoresist is polymer material which is lower Young’s modulus and manufacturing cost of fabrication than silicon, it must to be used as a material for polymeric detecting diaphragm in this work. The diaphragm is a circular shape which is under a strain gauge resistor.  The strain gauge resistor made from NiCr (nickel-chromium) thin film via thermal evaporation, UV lithography, and lift-off process is resistance of 4.404 kΩ on a SU-8 diaphragm which is with a radius of 500 µm and a thickness of 38 µm. This low cost sensor can measure gas pressure between 30-180 kPa at 25-60°C. Furthermore, this sensor has sensitivity of 26 mV/kPa, accuracy ±10%, and rise time in 2.3 second.

References

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Published

2020-06-17

How to Cite

[1]
บุญประคอง ก. ., ดีกล้า พ. ., and ชมนาวัง น. ., “Development of A Gauge Pressure Sensors Based on SU-8 Photoresist Diaphragm”, Eng. & Technol. Horiz., vol. 32, no. 4, pp. 19–24, Jun. 2020.

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Section

Research Articles