Study of an Amorphous Silicon Germanium Films for Use as an Absorber Layer of Bottom Cell in a-Si:H/a-SiGe:H Tandem Solar Cells

Authors

  • อภิชาญ มูลละคร
  • รังสรรค์ เมืองเหลือ
  • สรพงศ์ อินธิแสง
  • ทวีวัฒน์ กระจ่างสังข์
  • พีระวุฒิ ชินวรรังสี
  • ทรงเกียรติ กิตติสนธิรักษ์
  • อัศวิน หงษ์สิงห์ทอง
  • จรัญ ศรีธาราธิคุณ
  • กอบศักดิ์ ศรีประภา

Keywords:

Absorber layer,, Hydrogenated amorphous silicon, Hydrogenated amorphous silicon germanium

Abstract

This paper presents the study of the deposition of hydrogenated amorphous silicon germanium (a-SiGe:H) films with the optical bandgap (Eopt) target of 1.5-1.6 eV for use as the bottom-layer of a-Si:H/a-SiGe:H tandem solar cells by using plasma enhance chemical vapor deposition technique (PECVD). The source gases consist of Silane (SiH4), Germane (GeH4) and Hydrogen (H2) on films property were studied. It was found that the Eopt of the films was decreased with increasing the GeH4/(SiH4+GeH4)  and SiH4/(SiH4+GeH4) ratio. However, the electrical property of those films was decreased. For the variation of H2/(SiH4+GeH4) ratio, it was found that the Eopt of the films was increased while the electrical property was slightly decreased. The condition of the 1.53 eV a-SiGe:H film was applied to the bottom cell of a-Si:H/a-SiGe:H tandem solar cells. As a result, high efficiency solar cell of 10.8% (Voc1.71 V, FF 0.67, Jsc 9.4 mA/cm2) was successfully achieved.

References

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[4] J. Zimmer, H. Stiebig, and H. Wagner, “a-SiGe:H based solar cells with graded absorption layer,” J. Appl. Phys., Vol.84, No.1, pp.611-617, 1998.
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Published

2020-06-16

How to Cite

[1]
มูลละคร อ. ., “Study of an Amorphous Silicon Germanium Films for Use as an Absorber Layer of Bottom Cell in a-Si:H/a-SiGe:H Tandem Solar Cells”, Eng. & Technol. Horiz., vol. 32, no. 3, pp. 55–60, Jun. 2020.

Issue

Vol. 32 No. 3 (2015): July - September

Section

Research Articles

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