Grounded series RL-type lossy inductance simulator using Gm-C

Abstract

This paper presents the resistorless simulation of a grounded RL-type lossy inductor using only transconductance cells (G_m cells). The proposed circuit is created using eight MOS transistors and only one external grounded capacitor, resulting in a simple and compact structure as well as attractive for integration. The equivalent resistance value (R_eq) and equivalent inductance value (L_eq) can be adjusted separately by means of the external bias currents. Simulation results based on TSMC 0.35-mm CMOS process parameters are given to verify the theory and their operations.