Photoluminescence Study of Sol-Gel Derived Hf-/In- Doped ZnO Thick Films

Vikas Rathi; Sachin Sharma; Kailash Pandey; Abhishek Pathak; Manish Kumar

doi:10.55674/ias.v15i2.265486

Authors

Vikas Rathi Department of Physics, Meerut College, Meerut, 250001, India
Sachin Sharma Department of Physics, Meerut College, Meerut, 250001, India
Kailash Pandey Applied Sciences Cluster, University of Petroleum & Energy Studies, Bidholi, Dehradun-248007, India
Abhishek Pathak Organisation for Science Innovations and Research, RS Science Park, Bah, 283104, India
Manish Kumar Organisation for Science Innovations and Research, RS Science Park, Bah, 283104, India

DOI:

https://doi.org/10.55674/ias.v15i2.265486

Keywords:

ZnO, Photoluminescence, XRD, Thick films, Screen Printing

Abstract

Thick films of undoped ZnO and Hf/In doped ZnO were synthesized by sol-gel process followed by screen-printing. The microstructural and optical properties of prepared thick films were studied in order to study the effects of variation in dopant ions. Microstructural studies by X-ray diffraction analysis revealed the hexagonal ZnO formation in undoped as well as in Hf-/In-doped ZnO thick films. Both of the dopants induced lowering of the transmittance and also the optical band-gap. The photoluminescence spectra of undoped sample as well as doped samples show one emission peak in UV region, and a broad-band emission in visible region. The sample doped with Hf-/In- showed significant reduction in luminescence as compared to undoped ZnO.

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