Comparative Study of Substrate Type and Post-Annealing Temperature on Thermoelectric Properties of Bi₂Te₃ Thin Films

Sayan Chaiwas; Khunnapat Sriporaya; Natthapong Wongdamnern; Mati Horprathum; Saksorn Limwichean; Nat Kasayapanand

doi:10.55674/ias.v14i3.262838

Authors

Sayan Chaiwas Energy Technology Program, School of Energy Environment and Materials, King Mongkut's University of Technology Thonburi 126 Pracha Uthit Rd.,Bang Mod, Thung Khru, Bangkok, 10140, Thailand
Khunnapat Sriporaya Energy Technology Program, School of Energy Environment and Materials, King Mongkut's University of Technology Thonburi, 126 Pracha Uthit Rd.,Bang Mod, Thung Khru, Bangkok10140, Thailand
Natthapong Wongdamnern Department of Science, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, 144 Nonthaburi Road, Suanyai, Mueang, Nonthaburi 11000, Thailand
Mati Horprathum National Electronics and Computer Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani 12120, Thailand
Saksorn Limwichean National Electronics and Computer Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani 12120, Thailand
Nat Kasayapanand Energy Technology Program, School of Energy Environment and Materials, King Mongkut's University of Technology Thonburi, 126 Pracha Uthit Rd.,Bang Mod, Thung Khru, Bangkok 10140, Thailand

DOI:

https://doi.org/10.55674/ias.v14i3.262838

Keywords:

Thermoelectric, Bi2Te3 thin film, DC pulse magnetron sputtering

Abstract

This study explores the effects of substrate type and post-annealing temperature on the structural and thermoelectric properties of Bi₂Te₃ thin films prepared by DC reactive magnetron sputtering. Films were deposited on both rigid (SiO₂) and flexible (polyimide, PA) substrates, followed by annealing at 50 , 150 , and 250 °C. Structural characterization via XRD and FE-SEM indicated enhanced crystallinity with increasing temperature, particularly on SiO₂, whereas films on PA exhibited minimal structural evolution due to the substrate's lower thermal stability. EDS analysis showed that annealing shifted the Bi/Te ratio closer to the stoichiometric composition, especially for SiO₂-based films. Thermoelectric measurements revealed that SiO₂-supported films consistently demonstrated lower electrical resistivity, higher Seebeck coefficient, and superior power factor compared to those on PA. The best thermoelectric performance was observed after moderate annealing on SiO₂. These results highlight the critical role of substrate selection and thermal processing in optimizing Bi₂Te₃ thin films for both rigid and flexible thermoelectric device applications.

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