Effect of controlled operating pressure on physical optical and electrical properties of AZO thin film by DC magnetron sputtering technique
DOI:
https://doi.org/10.55674/jmsae.v11i3.244616Keywords:
AZO film, Bulk concentration, DC Magnetron SputteringAbstract
The study aimed to research the controlled operating pressure in the range of
1.10 × 10–2 − 2.60 × 10–3 mbar with the adjustment position of plate valve (40 – 100%) using DC pulsed magnetron sputtering system. The AZO films were prepared onto
n-type silicon (100) and glass slide substrates. A comparison, all samples were assigned
400 nm of AZO film thickness and then the prepared AZO films were investigated by field-emission scanning electron microscope (FE-SEM) for surface morphologies, X-ray diffraction (XRD) for crystallinity, UV-Vis-NIR spectrophotometry for optical property, Four-point probe and Hall effect instrument for electrical properties, respectively. The results from FE-SEM image showed that the AZO film was columnar structure. The XRD patterns of AZO films demonstrated the crystal growth direction which preferred AZO growth was indicated the (polycrystalline) hexagonal wurtzite structure. For the optical property, the transmittance (%T) clearly showed transparent film, indicating good average value which was 81.54 – 83.28% in visible region (380 to 780 nm of wavelength). Furthermore, the sheet resistivity, high mobility and carrier concentration displayed
91.48 Ohm sq−1, 3.40 cm2 Vs–1 and 7.00 × 1020 cm–3, respectively. These results were decided that the position of plate valve of 85% with operating pressure of 2.70 × 10–3 mbar was the optimal condition. Finally, the excellent electrical and good optical properties of AZO film is mainly applied in several application for optoelectronic device and solar cell.
References
É.P. Da Silva, M. Chaves, S.F. Durrant, P.N. Lisboa-Filho, J.R.R. Bortoleto, Morphological and electrical evolution of ZnO:Al Thin films deposited by RF magnetron sputtering onto glass substrates, in: Mater. Res., Universidade Federal de Sao Carlos, 2014: pp. 1384 – 1390.
B. Szyszka, W. Dewald, S.K. Gurram, A. Pflug, C. Schulz, M. Siemers, V. Sittinger, S. Ulrich, Recent developments in the field of transparent conductive oxide films for spectral selective coatings, electronics and photovoltaics, Curr. Appl. Phys. 12 (2012) 2 – 11.
T. Minami, T. Miyata, Present status and future prospects for development of non- or reduced-indium transparent conducting oxide thin films, Thin Solid Films. 517 (2008) 1474 – 1477.
H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgr, H. Morkoç, Transparent conducting oxides for electrode applications in light emitting and absorbing devices, Superlattices Microstruct. 48 (2010) 458 – 484.
Y.F. Lu, H.Q. Ni, Z.H. Mai, Z.M. Ren, The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition, J. Appl. Phys. 88 (2000) 498 – 502.
A.P. Roth, D.F. Williams, Properties of zinc oxide films prepared by the oxidation of diethyl zinc, J. Appl. Phys. 52 (1981) 6685– 6692.
A.E. Jiménez-González, J.A. Soto Urueta, R. Suárez-Parra, Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique, J. Cryst. Growth. 192 (1998) 430 – 438.
K. Seawsakul, M. Horprathum, P. Eiamchai, V. Pattantsetakul, S. Limwichean, P. Muthitamongkol, C. Thanachayanont, P. Songsiriritthigul, Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering, Mater. Today Proc. 4 (2017) 6466 – 6471.
N. Boonyopakorn, R. Rangkupan, T. Osotchan, Preparation of aluminum doped zinc oxide targets and RF magnetron sputter thin films with various aluminum doping concentrations, Songklanakarin J. Sci. Technol. 40 (2018) 824 – 830.
F. Challali, D. Mendil, T. Touam, T. Chauveau, V. Bockelée, A.G. Sanchez, A. Chelouche, M.P. Besland, Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration, Mater. Sci. Semicond. Process. 118 (2020).
Y. Zhu, R.J. Mendelsberg, S.H.N. Lim, J. Zhu, J. Han, A. Anders, Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition, J. Mater. Res. 27 (2012) 857 – 862.
X. Lv, Y. Cao, L. Yan, Y. Li, Y. Zhang, L. Song, Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation, ACS Appl. Mater. Interfaces. 10 (2018) 6601 – 6607.
S. Limwichean, P. Eiamchai, C. Ponchio, N. Kasayapanand, M. Horprathum, Comparative investigations of DCMS/HiPIMS reactively sputtered WO3 thin films for photo-electrochemical efficiency enhancements, Vacuum. 185 (2021) 109978.
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2022 Journal of Materials Science and Applied Energy
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
