Enhancement of band gap and electrical conductivity properties of TiO2 nanowire by Ni with hydrothermal method

Mahamasuhaimi Masae; Witthaya Sririkun; Peerawas Kongsong

doi:10.55674/jmsae.v11i1.240634

Authors

Mahamasuhaimi Masae Rajamangala University of Technology Srivijaya
Witthaya Sririkun Rajamangala University of Technology Srivijaya
Peerawas Kongsong Rajamangala University of Technology Isan

DOI:

https://doi.org/10.55674/jmsae.v11i1.240634

Keywords:

TiO2(B) nanowire, Hydrothermal, Ni doped TiO2

Abstract

Nickel doped Titanium dioxide phase B nanowires (Ni/TiO₂(B) NWs) were successfully fabricated by a hydrothermal method and characterized by XRD, FE-SEM, UV-vis and XPS spectroscopy. The FE-SEM images of the surface morphology showed that the size of nickel doped TiO₂(B) phase crystal was small (19 – 29 nm). The results indicated that the uniform Ni doped TiO₂(B) nanowires with a length of about 5 µm and an average diameter of about ∼204.80 nm were produced. The result also showed composite with 4 mol% Ni doped TiO₂(B) NWs phase exhibited optimum photocatalytic activity for the synergeric effects of electrical conductivity and band gap energy. The properties study of Ni/TiO₂(B) NWs leading to a new applications of high-performance materials as solar cells, electronics batteries and many other applications.

Author Biographies

Mahamasuhaimi Masae, Rajamangala University of Technology Srivijaya

1. Department of Industrial Engineering, Faculty of Engineering, Rajamangala University of Technology Srivijaya, Songkhla, 90000 Thailand
2. Fiber and Textile Research Unit, Faculty of Engineering, Rajamangala University of Technology Srivijaya, Songkhla, 90000 Thailand

Witthaya Sririkun, Rajamangala University of Technology Srivijaya

Department of Industrial Engineering, Faculty of Engineering, Rajamangala University of Technology Srivijaya, Songkhla, 90000 Thailand

Peerawas Kongsong, Rajamangala University of Technology Isan

Department of Materials Engineering, Faculty of Engineering and Architecture, Rajamangala University of Technology Isan, Nakhon Ratchasima, 30000 Thailand