Fabrication and Thermoelectric Properties of p-Bi0.4Sb1.6Te3.4 and n-Bi2Te3 for Thermal Sensors

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Surasak Ruamruk


We optimized a low signal the thermal sensor of p-Sb2Te3 by synthesized p-Bi0.4Sb1.6Te3.4 from Bi, Sb and Te powder using planetary ball mill and hot press methods to obtain bulk samples. The thermoelectric (TE) properties and crystal structure of bulk samples were investigated by ZEM-3 and XRD method. The electrical conductivity, Seebeck coefficient, thermal conductivity and dimensionless figure of merit of p-Bi0.4Sb1.6Te3.4 and n-Bi2Te3 samples were increased with increasing temperature range from 300 − 550 K in He atmosphere. The thermal sensor of p-Bi0.4Sb1.6Te3.4 and n-Bi2Te3 thermoelectric cell has similarly signal K type thermocouple.

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