The Completed Probabilistic Modelling of Nanometer MIFGMOSFET

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Rawid Banchuin
Roungsan Chaisrichaoren

Abstract

A completed model of the probabilistic distribution of the drain current’s random variation of the nanometer multiple input floating gate MOSFET (MIFGMOSFET) is proposed in this work. The modelling process has taken the dominant physical level causes of the drain current’s variations into account. Unlike its predecessor, the proposed model considers both N-type and P-type nanometer MIFGMOSFET. Moreover, the formerly neglected parasitic coupling capacitances have also been taken into account. The obtained modelling results, which are based on the derived drain current’s equations of nanometer MIFGMOSFET, are very accurate. They can predict the probabilistic distributions of the candidate N-type and P-type nanometer MIFGMOSFETs obtained by using Monte-Carlo simulations with 99% confidence and higher accuracy than that of the previous work. We also perform a comparative robustness study of the nanometer MIFGMOSFET of both types and demonstrate various interesting applications of our modelling results

Article Details

How to Cite
[1]
R. Banchuin and R. Chaisrichaoren, “The Completed Probabilistic Modelling of Nanometer MIFGMOSFET”, ECTI-CIT, vol. 14, no. 2, pp. 201-212, Sep. 2020.
Section
Research Article

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