RUANGPHANIT, A.; MUANGHLUA, R.; WONGPRASERT, Y. Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology. Engineering and Technology Horizons , [S. l.], v. 40, n. 4, p. 400409, 2023. DOI: 10.55003/ETH.400409. Disponível em: https://ph01.tci-thaijo.org/index.php/lej/article/view/251344. Acesso em: 27 aug. 2026.