https://ph01.tci-thaijo.org/index.php/jmsae_ceae <p><a href="https://ph01.tci-thaijo.org/index.php/jmsae_ceae/search/search" target="_blank" rel="noopener"><strong>Journal of materials science and applied energy</strong></a><strong> (J. Mater. Sci. Appl. Energy.)</strong> is an international journal and peer-reviewed medium for the publication of theoretical and experimental materials science and applied energy includes thermoelectric, piezoelectric, thin films, solar cells, biomass, battery, nanomaterials, microelectronic devices, renewable energy and alternative energy, are welcome.</p> <p>Journal of materials science and applied energy is peer-reviewed (Double-blind peer review) and published as online open-access journal.<br />Journal of materials science and applied energy free of charge for submission, publication and access</p> <p><strong>Journal Abbreviation: </strong>J. Mater. Sci. Appl. Energy.<br /><strong>Start year:<br />Language</strong>: English<br /><strong>ISSN (Print )</strong>: 2286-7201<br /><strong>ISSN (Online)</strong>: 2651-0898</p> <p><strong>Publishing times: <br /></strong> Initial decision to review &gt;&gt; 1 - 2 weeks after submission<br /> Decision after review &gt;&gt; 3 - 4 weeks after submission<br /> Time suggested for revision &gt;&gt; 1 - 3 months</p> <p><strong>Publication fee: </strong>NO Article Submission Charges &amp; NO Article Processing Charges (APC)<br /><strong>Free access:</strong> Immediate</p> <p><strong>Issues per year</strong> : three per year</p> <p><strong>Editor in Chief</strong> <br /><a href="https://www.scopus.com/authid/detail.uri?authorId=10142411600">Tosawat Seetawan, </a>Department of Physics, Faculty of science and techonology, Sakon Nakhon Rajabhat University, Sakon Nakhon, 47000 Thailand</p> en-US <p>&nbsp; &nbsp; &nbsp;<a href="https://drive.google.com/file/d/1mv_M5vx1Hyo8Y1EUSpMUyFR-V71F4Gxb/view?usp=sharing" target="_blank" rel="noopener"><img src="/public/site/images/jmsaeceae/Copyright-agreement-form.png"></a></p> [email protected] (Prof. Dr.Tosawat Seetawan (Editor-in-Chief)) [email protected] (Nattee Khottummee) Mon, 01 Jan 2024 00:00:00 +0700 OJS 3.3.0.8 http://blogs.law.harvard.edu/tech/rss 60 https://ph01.tci-thaijo.org/index.php/jmsae_ceae/article/view/247680 <p>Gd123 and Y123 superconducting materials were synthesized using the conventional solid-state reaction method, and their physical properties were compared. The critical temperature was determined based on the relationship between resistivity and temperature, and the average temperatures of Gd123 and Y123 were found to be 87.35K and 86.48K, respectively. The percentage of the superconducting compound and non-superconducting compound was determined using the Rietveld refinement method, which also revealed that the orthorhombic crystal structure belonged to the superconducting compound. The Gd123 sample had a higher proportion of the superconducting compound than the Y123 sample. EDX mapping analysis was used to investigate the composition of the samples, including the elements Y, Ba, Cu, and O, and the absence of impurities. The Gd123 and Y123 samples had melting points of 1,313K and 1,303K, respectively. The oxygen content of the samples was determined using the iodometric titration method, and the Gd123 and Y123 samples had oxygen contents of 6.68 and 6.58, respectively.</p> Thitipong Kruaehong, Supphadate Sujinnapram, Tunyanop Nilkamjon, Sermsuk Ratreng, Pongkaew Udomsamuthirun Copyright (c) 2024 J. Mater. Sci. Appl. Energy https://creativecommons.org/licenses/by-nc-nd/4.0 https://ph01.tci-thaijo.org/index.php/jmsae_ceae/article/view/247680 Thu, 21 Dec 2023 00:00:00 +0700 https://ph01.tci-thaijo.org/index.php/jmsae_ceae/article/view/251506 <p>Aluminium gallium nitride (AlGaN) thin films provide promise for a variety of electronic devices due to their wide energy bandgap, which ranges from 3.11 – 6.40 eV. Here, a co-sputtering approach utilising the RF and HiPIMS power supply of magnetron sputtering is used to deposit the AlGaN thin films. To examine their impact on the structural characteristics and morphology of the thin films, the AlGaN thin films were deposited under various sputtering pressures using the co-sputtering technique. Following that, the films were examined using X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), and surface profiling to determine their characteristics. XRD shows the polycrystalline AlGaN with (100), (101), (102), and (110) plane for the AlGaN deposited at a sputtering pressure of 3 mTorr and 5 mTorr with FWHM 0.622° and 0.732°, respectively. The increasing the sputtering pressure to 5 mTorr is found to improve the crystallinity as well as the thickness of the AlGaN thin films from 234.27 – 1479.37 nm. AFM examination of the AlGaN film revealed a trend of increasing roughness and grain size together up to 3.25 nm and 47.22 nm respectively, with rising sputtering pressure from 1 – 7 mTorr. The co-sputtering of AlGaN can be successfully demonstrated in this study, and it is also shown that the sputtering pressure has a substantial impact on the development of AlGaN thin films produced using this technology.</p> Nur Afiqah Othman, Nafarizal Nayan, Mohd Kamarulzaki, Zulkifli Azman, Shuhaimi Abu Bakar, Mohd Hafiz Mamat, Mohd Zamri Mohd Yusop, Mohd Yazid Ahmad Copyright (c) 2024 J. Mater. Sci. Appl. Energy https://creativecommons.org/licenses/by-nc-nd/4.0 https://ph01.tci-thaijo.org/index.php/jmsae_ceae/article/view/251506 Thu, 21 Dec 2023 00:00:00 +0700