BANCHUIN, R.; CHAISRICHAROEN, R. Probabilistic Modelling of Variation in FGMOSFET. ECTI Transactions on Computer and Information Technology (ECTI-CIT), [S. l.], v. 11, n. 1, p. 50–62, 2017. DOI: 10.37936/ecti-cit.2017111.63429. Disponível em: https://ph01.tci-thaijo.org/index.php/ecticit/article/view/63429. Acesso em: 3 may. 2024.