Banchuin, R. and Chaisricharoen, R. 2017. Probabilistic Modelling of Variation in FGMOSFET. ECTI Transactions on Computer and Information Technology (ECTI-CIT). 11, 1 (Jun. 2017), 50–62. DOI:https://doi.org/10.37936/ecti-cit.2017111.63429.