Sa-ngiamsak, C., and S. Harnsoongnoen. “The Comparison of the I-V Characteristic Simulated By Using BSIM3v3 and EKV2.6 Models on Pspice for a MOS Transistor Biased With the Gate-Body Biasing Technique”. Engineering and Applied Science Research, vol. 33, no. 3, Feb. 2013, pp. 299-11, https://ph01.tci-thaijo.org/index.php/easr/article/view/5998.