SA-NGIAMSAK, C.; HARNSOONGNOEN, S. The Comparison of the I-V Characteristic Simulated By Using BSIM3v3 and EKV2.6 Models on Pspice for a MOS Transistor Biased With the Gate-Body Biasing Technique. Engineering and Applied Science Research, [S. l.], v. 33, n. 3, p. 299–311, 2013. Disponível em: https://ph01.tci-thaijo.org/index.php/easr/article/view/5998. Acesso em: 1 oct. 2026.